Effect of Dopant Concentration on the Film Properties of In Films Prepared by sol

We report on the effect of dopant concentration and substrate temperature on the electrical, optical and structural propertie of In-doped ZnO thin films via sol-gel method using spin coating technique to tackle the problem of high instrumental costs for film deposition. In particular, the effect of In dopant concentration will study at wide range (from 1% up to 10%) by using spin coating technique in this work. The result shows that the substrate temperature at 430 exhibited the lowest resistivity. The optimized condition for spin coating of IZO films at 5 at. % In doping which deposited 430 °C exhibited lowest resistivity (5.58 x 10 with films thickness about 258 nm. Additionally, the optical transmittance spectra for all IZO films show a very good transmittance, between 80 and 90%, with synthesized by low cost way via sol-gel method can be considered as the promising candidate for TCO in thin film solar cell